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| sch ottky b arrier d iode f eatures ? small p a c k age ? low f orward v oltage applications ? high s peed s witching marking : n9 maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v r dc blocking v oltage 10 v i o f orward c ontinuous c urren t 100 ma i fm p eak f orward c urrent 200 ma i f s m surge c urrent @ 10ms 1 a p d power d issipation 10 0 mw r j a the rmal r esistance f rom junction t o a mbient 1 000 /w t j junction t emperature 1 25 t stg s torage t emperature - 5 5 ~+ 150 electrical c haracteristics (t a =2 5 unless otherwise specified) parameter symb ol test conditions m in typ m ax u nit reverse voltage v (br) i r =10 0 a 1 0 v reverse c urrent i r v r = 1 0 v 20 a i f = 1 ma 0.18 i f = 5 ma 0.3 forward voltage v f i f = 100 ma 0.5 v total capacitance c tot v r = 0 v,f=1mhz 40 pf so t - 3 23 1SS372 1 date:2011/05 www.htsemi.com semiconductor jinyu
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